Atomic Layer Deposition
Features:
- Low- to mid-temperature (100-250 C) deposition system
- Up to 8” wafer
- Precursors:
- Trimethylaluminun,
- Tetrakis-dimethylamino Hafnium,
- tris dimethylamino Silane,
- Platinum,
- Nitride amedinate
- Lead to the following films: Al2O3, HfO2 , NiO, Ni, TiN and SiO2.
- Catalyst precursor: water
- Carrier Gas: Ar
- Special Features:
- Ar booster for Amedinate precursor line
- Ozone generator
- Remote plasma: NH3, O2, Ar, N2, H2, CF4
Compatible Materials: CMOS compatible
Incompatible Materials: Photo Resist, Gold, Copper
Training video: How to do ALD deposition using a Fiji ALD
