Heterogeneous Integration of Monolayer Graphene and Semiconductor Device

Physical Sciences : Electrical

Available for licensing

Inventors

  • Deji Akinwande, Ph.D. , Electrical and Computer Engineering
  • Seyedeh Maryam Mortazavi Zanjani , University of Texas at Austin
  • Mir Sadeghi, M.S. , Nascent
  • Milo Holt, B.S. , Microelectronics Research Center

Background/unmet need

Detecting presence of gas molecules is important for controlling chemical processes, safety systems, and industrial and medical applications. Despite progress in developing and improving various types of gas sensors, sensors with higher sensitivity, selectivity, lower sensing limit, and lower cost that can perform at room temperature remain desirable. Graphene is a promising candidate for gas sensing applications due to its unique transport properties, exceptionally high surface-to-volume ratio, and low electrical noise.

Invention Description

Researchers at The University of Texas at Austin have worked on the integration of monolayer graphene and semiconductor for the first time. The prototype integrates graphene with a CMOS circuit, which consists of a 5-stage CMOS ring oscillator with top surface graphene interconnects bridging inverter stages by way of metal contacts to passivation layer vias.

Benefits/Advantages

    Simplification of post-CMOS processing steps, with resultant gains in robustness and reliability. 

Features

  • Integration of monolayer (single atomic layer) and semiconductor for the first time.
  • Novel fabrication process.

Market potential/applications

Semiconductor industry 

Development Stage

Lab/bench prototype

IP Status

  • 1 U.S. patent application filed